Hello, In a C64 replacing the DRAM with an SRAM is no longer an issue, but so far there was no working design to do the same in a 264 (C16/116/+4). I was bored yesterday evening and decided to change that. I still had an Alliance AS6C1008 (55ns) around and since TED supplies its address lines unmultiplexed most of the wiring is rather simple: A0-A15, D0-D7 are connected 1:1. /OE on the RAM is tied low, CS2 and A16 are tied high. /CS on the RAM is /CAS from TED. The only problematic signal was R/W, that one has to be routed through an inverter and then NAND'ed with PHI0 before being connected to the RAM. So all you need besides the RAM is a single 74LS00. My hacked together test circuit has so far survived all software I tested it with, including some demos. So if you can't find 64Kx4 DRAMs, you now have an alternative. While checking why the RAM didn't run with R/W connected directly I noticed that TED uses a different RAS/CAS timing than VIC. VIC will take /RAS and /CAS HIGH on the rising or falling edge of PHI0. TED on the other hand will take both signals HIGH about 100ns _after_ the rising or falling edge of PHI0. No problem with a read cycle, but on a write cycle, that'll cause problems. Gerrit Message was sent through the cbm-hackers mailing listReceived on 2017-05-14 13:00:02
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